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PD - 5.061B
PRELIMINARY
GA200TD120U
Ultra-FastTM Speed IGBT
VCES = 1200V VCE(on) typ. = 2.3V
@VGE = 15V, IC = 200A
"HALF-BRIDGE" IGBT DOUBLE INT-A-PAK
Features
* Generation 4 IGBT technology * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Very low conduction and switching losses * HEXFREDTM antiparallel diodes with ultra- soft recovery * Industry standard package * UL approved
Benefits
* Increased operating efficiency * Direct mounting to heatsink * Performance optimized for power conversion: UPS, SMPS, Welding * Lower EMI, requires less snubbing
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25C ICM ILM IFM VGE VISOL PD @ TC = 25C PD @ TC = 85C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Pulsed Collector Current Peak Switching Current Peak Diode Forward Current Gate-to-Emitter Voltage RMS Isolation Voltage, Any Terminal To Case, t = 1 min Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Range Storage Temperature Range
Max.
1200 200 400 400 400 20 2500 1040 540 -40 to +150 -40 to +125
Units
V A
V W C
Thermal / Mechanical Characteristics
Parameter
RJC RJC RCS Thermal Resistance, Junction-to-Case - IGBT Thermal Resistance, Junction-to-Case - Diode Thermal Resistance, Case-to-Sink - Module Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module
Typ.
-- -- 0.1 -- -- 400
Max.
0.12 0.20 -- 4.0 3.0 --
Units
C/W N. m g
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1
3/20/98
GA200TD120U
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)CES VCE(on) Min. Typ. Max. Units Conditions 1200 -- -- VGE = 0V, IC = 1mA -- 2.3 2.8 VGE = 15V, IC = 200A -- 2.1 -- V VGE = 15V, IC = 200A, TJ = 125C VGE(th) Gate Threshold Voltage 3.0 -- 6.0 IC = 2.5mA DVGE(th)/DTJ Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 2.5mA gfe Forward Transconductance -- 261 -- S VCE = 25V, IC = 200A ICES Collector-to-Emitter Leaking Current -- -- 2.0 mA VGE = 0V, VCE = 1200V -- -- 20 VGE = 0V, VCE = 1200V, TJ = 125C Diode Forward Voltage - Maximum -- 3.2 4.1 V IF = 200A, VGE = 0V VFM -- 3.1 -- IF = 200A, VGE = 0V, TJ = 125C IGES Gate-to-Emitter Leakage Current -- -- 500 nA VGE = 20V Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage
Dynamic Characteristics - TJ = 125C (unless otherwise specified)
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff (1) Ets (1) Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak ReverseCurrent Diode Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 1660 2490 VCC = 400V VGE = 15V 280 420 nC IC = 249A 550 825 TJ = 25C 636 -- RG1 = 15, RG2 = 0, 201 -- ns IC = 200A 650 -- VCC = 720V 341 -- VGE = 15V 44 -- mJ 44 -- 88 130 37343 -- VGE = 0V 1660 -- pF VCC = 30V 322 -- = 1 MHz 196 -- ns IC = 200A 131 -- A RG1 = 15 12833 -- nC RG2 = 0 1740 -- A/s VCC = 720V di/dt1294A/s
2
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GA200TD120U
120
F or b oth:
100
LOAD CURRENT (A)
D uty c y c le : 50 % T J = 12 5 C T sink = 90 C G a te d riv e a s s pe c ified
P ow er D is s ipation = 160 W
80
S q u a re w a v e:
60
60% of rated v oltage
I
40
20
Ide a l d io d e s
0 0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
1000
I C , Collector-to-Emitter Current (A)
I C , Collector Current (A)
TJ = 125 C
TJ = 125 C
100
100
TJ = 25 C
TJ = 25 C
10
10 1.0
V GE = 15V 80s PULSE WIDTH
1.5 2.0 2.5 3.0
1 5.0
V CE = 25V 80s PULSE WIDTH
6.0 7.0 8.0 9.0
VCE , Collector-to-Emitter Voltage (V)
VGE , Gate-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
GA200TD120U
250 3.0
VCE , Collector-to-Emitter Voltage(V)
VGE = 15V 80 us PULSE WIDTH IC = 400 A
Maximum DC Collector Current(A)
200
150
IC = 200 A
2.0
100
IC = 100 A
50
0 25 50 75 100 125 150
1.0 -60 -40 -20
0
20
40
60
80 100 120 140 160
TC , Case Temperature ( C)
TJ , Junction Temperature ( C)
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature
1
T h erm al R e sp o ns e (Zth JC )
0.1
D = 0.50 0.20 0.10
0.01
P DM
0.05 0.02 0.01 S IN G LE P U LS E (TH E R M A L R E S P O N S E )
Notes: 1. Duty factor D = t
t 1 t2
1 / t2
0.001 0.0001
2. Peak TJ = PDM x Z thJC + TC
A
1000
0.001
0.01
0.1
1
10
100
t 1 , R e cta n g u la r P u ls e D u ra tio n (s e c)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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GA200TD120U
70000 60000
VGE , Gate-to-Emitter Voltage (V)
VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc
20
VCC = 400V I C = 249A 200A
16
C, Capacitance (pF)
50000
Cies
40000
12
30000
Coes
20000
8
Cres
10000
4
0 1 10 100
0 0 400 800 1200 1600 2000
VCE , Collector-to-Emitter Voltage (V)
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
140
Total Switching Losses (mJ)
Total Switching Losses (mJ)
V CC V GE TJ 130 IC
120
= 720V = 15V = 125 C = 200A
1000
RG =15;RG2 = 0 G1 = Ohm VGE = 15V VCC = 720V
IC = 400 A IC = 200 A IC = 100 A
110
100
100
90
80 0 10 20 30 40 50
( ) RG , Gate Resistance (Ohm)
10 -60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature C ) (
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Junction Temperature
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5
GA200TD120U
200
Total Switching Losses (mJ)
120
IC , Collector Current ( A)
RG =15;RG2 = 0 G1 = Ohm T J = 150 C VCC = 720V 160 VGE = 15V
500
V G E = 20V T J = 125C V C E m easured at term inal (Peak Voltage)
400
300
SAFE OPERATING AREA
80
200
40
100
0 0 100 200 300 400
0 0 200 400 600 800 1000 1200
A
1400
I C , Collector Current (A)
VCE , Collector-to-Em itter Voltage (V)
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
1000
Fig. 12 - Reverse Bias SOA
20000
I F = 400A
Instantaneous Forward Current - IF ( A )
IF = 200A
16000
I F = 100A
100
T J = 25C
QRR - ( nC)
T J = 125C
12000
8000
4000
10 1.0 2.0 3.0 4.0 5.0
0 500
VR = 72 0V T J = 1 25 C T J = 2 5C
1000
F orward V oltag e D ro p - V F M (V )
di f /dt - (A/ s)
1500
2000
Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
Fig. 14 - Typical Stored Charge vs. dif/dt
6
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GA200TD120U
400 250
I F = 400A I F = 200A
300
VR = 72 0V T J = 1 25 C T J = 2 5C
200
I F = 100A
I F = 400A I F = 200A
trr - ( ns )
200
IRRM - ( A )
150
I F = 100A
100
100 50
0 500
VR = 7 20V T J = 1 25 C T J = 2 5C
1000
di f /dt - (A/ s)
1500
2000
0 500
1000
1500
2000
di f /dt - (A/ s)
Fig. 15 - Typical Reverse Recovery vs. dif/dt
Fig. 16 - Typical Recovery Current vs. dif/dt
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7
GA200TD120U
90% V ge +V ge
V ce
Ic
10% V ce Ic
90% Ic
5% Ic td (off) tf
E off =
Vce Ic dt
t1+5 S V ce ic dt t1
Fig. 17a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1 t2
Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O LT A G E D .U .T . 10% + V g +V g
trr Ic
Q rr =
trr id dt Ic dt tx
tx 10% V c c Vce 10% Ic 90% Ic D U T V O LT A G E AND CURRENT Ipk Ic
10% Irr Vcc
V pk Irr
Vcc
D IO D E R E C O V E R Y W AVEFORMS td(on) tr 5% V c e t2 E on = V c e ieIc dt Vce dt t1 t2 D IO D E R E V E R S E RECOVERY ENERG Y t3 t4
E rec =
t4 V d idIc dt Vc dt t3
t1
Fig. 17c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
Fig. 17d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
8
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GA200TD120U
V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .
V O LT A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 17e. Macro Waveforms for Figure 18a's Test Circuit
L 1000V 50V 600 0 F 100 V Vc*
D.U.T.
R L= 0 - 600V
600V 4 X IC @25C
Figure 18. Clamped Inductive Load Test Circuit
Figure 19. Pulsed Collector Current Test Circuit
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GA200TD120U
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
See fig. 17 For screws M5x0.8 Pulse width 50s; single shot.
Case Outline -- DOUBLE INT-A-PAK
Dimensions are shown in millimeters (inches)
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 3/98
10
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